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  regarding the change of names mentioned in the document, such as hitachi electric and hitachi xx, to renesas technology corp. the semiconductor operations of mitsubishi electric and hitachi were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although hitachi, hitachi, ltd., hitachi semiconductors, and other hitachi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. renesas technology home page: http://www.renesas.com renesas technology corp. customer support dept. april 1, 2003 to all our customers
cautions keep safety first in your circuit designs! 1. renesas technology corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corporation or a third party. 2. renesas technology corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by renesas technology corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact renesas technology corporation or an authorized renesas technology corporation product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corporation by various means, including the renesas technology corporation semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact renesas technology corporation or an authorized renesas technology corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corporation is necessary to reprint or reproduce in whole or in part these materials. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corporation for further details on these materials or the products contained therein.
HA16129AFPJ single watchdog timer ade-204-067 (z) rev. 0 mar. 2001 description the HA16129AFPJ is a watchdog timer ic that monitors a microprocessor for runaway. in addition to the watchdog timer function, the HA16129AFPJ also provides a function for supplying a high-precision stabi lized power supply to the microprocessor, a power on reset function, a power supply voltage monitoring function, and a fail-safe function that masks the microprocessor outputs if a runaway is detected. functions watchdog timer (wdt) function monitors the p-run signal output by the microprocessor, and issues an auto-reset ( res ) signal if a microprocessor runaway is detected. stabilized power supply provides power to the microprocessor. power on and clock off functions the power on function outputs a low level signal to the microprocessor for a fixed period when power is first applied. the clock off function outputs a res signal to the microprocessor a fixed period after a runaway occurs. power supply monitoring function when the reference voltage (vout) falls and becomes lower than the nmi detection voltage (4.63 v, typ) or the stby detection voltage (3.0 v typ), this function outputs either an nmi signal or an stby signal, respectively. note that nmi detection can be set to monitor either v cc or vout. oute function *1 (fail-safe function) outputs a signal used to mask microprocessor outputs when a microprocessor runaway has been detected. res delay function sets the delay between the time the nmi signal is output and the time the res signal is output. protection functions the HA16129AFPJ incorporates both vout overvoltage prevention and short detection functions. note: 1. oute function: oute is an abbreviation for output enable.
HA16129AFPJ 2 features high-precision output voltage: 5.0 v 1.5% the wdt supports both frequency and duty detection schemes. high-precision power supply monitoring function: 4.625 v 0.125 v built-in oute function all functions can be adjusted with external resistors and/or capacitors. pin arrangement (top view) v cc stby 1 2 3 4 5 6 7 8 9 10 p-run rf cf gnd voadj oute 20 19 18 17 16 15 14 13 12 11 stbyadj nmiadj nmisns cont cs v out c res r r c r r t res nmi
HA16129AFPJ 3 block diagram - + 71k 1.5v stby detection block 36.8k - + 2k nmi detection block 25k 1.18v 70k 80k 3.3k 19 15 stbyadj nmisns 16 nmiadj to vout 31.2k q r s res stby t on detection block 6 r t 5 c r q r s nmi 3 cf if*16 if/6 1 p-run - + - + - wdt block i r i r *4/3 delay circuit block - 8.4k 20k 33k 19k 18 3.3k + - + 7 c res res - + q r s oute block 10 3.3k oute 17 nmi 20 stby 11 12 13 regulator block + - v cc cs cont short detection block 9 voadj 14 v out to microprocessor (or other device) power supply connections res block 4 r r 2 rf i r if 2v 8 gnd 3.3k 1.24v overvoltage detection block note: the current, voltage, and resistor values listed in the diagram are reference values. : connect to vout
HA16129AFPJ 4 pin function related function pin no. symbol function wdt. 1 p-run watchdog timer pulse input. the auto-reset function is controlled by the duty cycle or frequency of this input pulse signal. 2 rf the resistor connected to this pin determines the current that flows in the cf pin capacitor. use the resistor value from 100 k w to 500 k w 3 cf the current determined by the rf pin charges the cf capacitor and the potential on this pin determines the watchdog timer frequency band. t rh , t rl , t off 4r r the resistor connected to this pin determines the current that flows in the c r pin capacitor. use the resistor value from 100 k w to 500 k w 5c r the current determined by the r r pin charges the capacitor c r and the potential on this pin controls the res function (toff, t rh , and t rl ). t on 6r t the resistor r t , which determines only the time t on for the res function is connected to this pin. this resistor determines the current that charges the capacitor c r for the time t on . use the resistor value from 100 k w to 500 k w tr, t res 7c res the current determined by the rf pin charges the capacitor c res , and the res delay times (tr and t res ) are determined by the potential of this capacitor. 8 gnd ground vout 9 voadj insert the resistor roadj if fine adjustment of the regulator output voltage vout is required. leave this pin open if vout does not need to be changed. output 10 oute output for the oute function power supply 11 v cc power supply short detection 12 cs connect the overcurrent detection resistor between the cs pin and the v cc pin. if this function is not used, short this pin to v cc . also, connect this pin to the emitter of the external transistor. vout 13 cont connect this pin to the base of the external transistor. 14 v out provides the regulator output voltage and the ic internal power supply. connect this pin to the collector of the external transistor. nmi 15 nmisns this pin senses the nmi detection voltage. if v cc is to be detected, connect this pin to the v cc pin (however, note that an external resistor is required), and if vout is to be detected, connect this pin to the v out pin. 16 nmiadj insert a resistor if fine adjustment of the nmi detection voltage is required. leave this pin open if fine adjustment is not required. output 17 nmi nmi output output 18 res res output stby 19 stbyadj insert a resistor if fine adjustment of the stby detection voltage is required. leave this pin open if fine adjustment is not required. output 20 stby stby output
HA16129AFPJ 5 functional description this section describes the functions provided by the ha16129fpj. see the section on formulas for details on adjustment methods. regulator block vout voltage this ic provides a stabilized 5 v power supply by controlling the base current of an external transistor. the largest current (the maximum cont pin current) that can be drawn by the base of this external transistor is 20 ma. also note that the vout output is also used for the power supply for this ic? internal circuits. short detection block when a current detection resistor (r cs ) is connected between the v cc pin and the cs pin, and the voltage between these pins exceeds the v cs voltage (700 mv typ), the cont pin function turns off and the output voltage supply is stopped. output voltage (vout) adjustment the output voltage can be adjusted by connecting an external resistor at the output voltage adjustment pin (voadj). however, if for some reason the voltage on this vout line increases and exceeds the voltage adjustment range (7 v max), the cont pin function turns off and the output voltage supply is stopped. refer to the timing charts in conjunction with the following items. lvi (low voltage inhibit) nmi detection voltage this function monitors for drops in the power-supply voltage. this function can be set up to monitor either v cc or vout. when vout is monitored, a low level is output from the nmi pin if that voltage falls under the detection voltage (4.63 v typ). then, when the power-supply voltage that fell rises again, the nmi pin will output a high level. note that this function has a fixed hysteresis of 50 mv (typ). the monitored power supply is selected by connecting the nmisns pin either to the v cc pin or to the v out pin. when detecting v cc , an external adjustment resistor is required.) the detection voltage can also be adjusted with the nmiadj pin. stby detection voltage this function monitors for drops in the vout voltage. it monitors the vout voltage, and outputs a low level from the stby pin if that voltage drops below the detection voltage (3.0 v typ). then, when the power- supply voltage that fell rises again, the stby pin will output a high level. note that this function has a fixed hysteresis of 1.35 v (typ). the detection voltage can also be adjusted with the stbyadj pin.
HA16129AFPJ 6 function start voltage this is the minimum required vout voltage for the res , nmi , stby , and oute output pin functions to start operating. it is stipulated as the voltage that vout must reach after power is first applied for these pins to output a low level. hysteresis this is the difference between the lvi function detection voltage when the power-supply voltage drops, and the clear (reset) voltage when the power-supply voltage rises. (v hysn = v nmi ' - v nmi ; v hyss = v stby ' - v stby ) oute function when a microprocessor is in the runaway state, its outputs are undefined, and thus it is possible that the outputs may be driven by incorrect signals. this function is used to mask such incorrect microprocessor outputs. when the wdt function recognizes normal operation (when the res output is high), the oute output will be held high. when the wdt function recognizes an abnormal state and an auto-reset pulse is output from the res pin, the oute output will be held low. thus microprocessor outputs during microprocessor runaway can be masked by taking the and of those outputs and this signal using external and gates. the oute output will go high when the c r pin voltage exceeds vthhcr2, and will go low when that voltage falls below vthlcr. there are limitation that apply when the oute function is used. refer to the calculation formulas item for details. res function t rh this period is the length of the high-level output period of the res pulse when the p-run signal from the microprocessor stops. this is the time required for the c r potential to reach vthlcr from vthhcr1. t rl this period is the length of the low-level output period of the res pulse when the p-run signal from the microprocessor stops. this is the time required for the c r potential to reach vthhcr1 from vthlcr. t off this is the time from the point the p-run signal from the microprocessor stops to the point a low level is output from the res pin. during normal microprocessor operation, the potential on the c r pin will be about vout - 0.2 v (although this value may change with the p-run signal input conditions, so it should be verified in the actual application circuit) and t off is the time for the c r pin potential to reach vthlcr from that potential.
HA16129AFPJ 7 t on t on is the time from the point the nmi output goes high when power is first applied to the point the res output goes low. t on is the time for the potential of the c r pin to reach vthhcr1 from 0 v. tr the time tr is the fixed delay time between the point the nmi output goes from low to high after the power- supply voltage comes up to the point res goes from low to high. the time tr is the time for the cres pin potential to fall from the high voltage (about 1.9 v) to vthcres. t res the time t res is the fixed delay time between the point the nmi output goes from high to low when the power-supply voltage falls to the point res goes from high to low. the time t res is the time for the c res pin potential to rise from 0 v to vthcres. wdt function this function determines whether the microprocessor is operating normally or has entered a runaway state by monitoring the duty or frequency of the p-run signal. when this function recognizes a runaway state, it outputs a reset pulse from the res pin and sets the oute pin to low from high. it holds the res and oute pins fixed at high as long as it recognizes normal microprocessor operation. in this function, the potential of the cf capacitor is controlled by the p-run signal. this cf pin potential charges the capacitor c r that controls the reset pulse to be between vthlcf and vthhcf. the judgment as to whether or not the microprocessor is operating normally, is determined by the balance between the charge and discharge voltage on the capacitor c r at this time.
HA16129AFPJ 8 calculation formulas item formula notes reference voltage vout = 1.225 1 + r1, r2; k w 37 // r1 12 // r2 ( ( while the vout voltage will be 5 v 1.5% when the voadj pin is open, the circuit shown here should be used to change the vout voltage externally. voadj v cc cs vout r2 r1 short detection voltage v cs (700 mv typ) < i l r cs when this function operates, the base current to the external transistor connected to the cs pin stops and the vout output is lowered. v cc cs vout r cs i l ovp this function prevents the microprocessor from being damaged if the vout voltage is inadvertently increased to too high a level. the ovp detection voltage is fixed. t rh , t rl t rh t rl = 3.3 c r r r = 1.1 c r r r these determine the reset pulse frequency and duty. res t rh t rl t on t on = 1.1 c r r t sets the time from the rise of the nmi signal to the point the res output is cleared. nmi t on res t off t off = 6.5 c r r r sets the time from the point the p-run pulse stops to the point a reset pulse is output. res toff p-run
HA16129AFPJ 9 calculation formulas (cont) item formula notes v stby v stby = 1.48 67.6 29.5 + 36.2 // r1 + 1 ( ( the voltage at which the stby signal is output when vout falls. the stby detection voltage can be adjusted by connecting a resistor between the stbyadj pin and ground (r3). however, the stby recovery voltage cannot be adjusted. stby v stby v stby ' vout t stbyadj vout stby r1 v nmi (vout detection) v nmi = 1.2 1 + r1, r2; k w r1 // 73 r2 // 25 ( ( the voltage at which the nmi signal is output when vout falls. (when nmisns is connected to vout.) the nmi detection voltage can be adjusted by connecting resistors between the nmiadj pin and vout (r1), and between the nmiadj pin and ground (r2). nmi v nmi v nmi ' vout t vout r1 nmi nmisns nmiadj r2 gnd v nmi (v cc detection) v nmi = 4.62 recovery voltage r1 r2 // 97.1 ( ( + 1 v nmi = 4.68 r1, r2; k w r1 r2 // 45.5 ( ( + 1 the voltage at which the nmi signal is output when v cc falls. (when nmisns is connected to v cc .) the nmi detection voltage can be adjusted by connecting resistors between the nmisns pin and v cc (r1), and between the nmisns pin and ground (r2). nmi v nmi v nmi ' v cc t vout nmi nmisns r2 gnd r1 v cc cs oute c r r r > 19.3 cf rf if the oute function is used, the relationship shown at the left must be fulfilled to assure that pulses are not incorrectly generated in this output when a microprocessor runaway state is detected.
HA16129AFPJ 10 calculation formulas (cont) item formula notes wdt. f line1 = f line2 = 24% (fixed) f line3 = f line4 = 99% the relationship between f line1 and f line3 f line1 = f line3 12.9 (du - 24) 0.31 (du - 24) cf rf 0.024 cf rf the wdt function judges whether the p-run pulse signal is normal or not. if the wdt function judges the p-run pulse signal to be abnormal, it outputs a reset signal. the normal range is the area enclosed by f line1 to f line4 in the figure. t l t h du: the p-run signal duty cycle du = 100 t h t h + t l f line1 duty frequency normal operation area f line2 f line3 f line4
HA16129AFPJ 11 timing charts whole system timing chart t off v cc t on t rl t rh tr t res t res microprocessor runaway v stby ' v nmi v nmi ' v stby v out stby nmi res oute p-run
HA16129AFPJ 12 wdt. timing chart cf normal operation high-frequency runaway low-frequency runaway p-run vthhcf vthlcf c r res oute v out vthhcr2 t rh t off t rl vthhcr1 vthlcr (5 v) lvi timing chart v cc t on v stby ' v nmi v nmi ' v stby v out stby nmi res & oute c res tr t res vthcres c r
HA16129AFPJ 13 absolute maximum ratings (ta = 25 c) item symbol rating unit power supply voltage v cc 40 v cs pin voltage v cs v cc v cont pin current icont 20 ma cont pin voltage vcont v cc v vout pin voltage vout 12 v p-run pin voltage v prun vout v nmisns pin voltage v nmisns v cc v nmi pin voltage v nmi vout v stby pin voltage v stby vout v res pin voltage v res vout v oute pin voltage v oute vout v power dissipation *1 p t 400 mw operating temperature topr - 40 to +85 c storage temperature tstg - 50 to +125 c note: 1. this is the allowable value when mounted on a 40 40 1.6 mm glass-epoxy printed circuit board with a mounting density of 10% at ambient temperatures up to ta = 77 c. this value must be derated by 8.3 mw/ c above that temperature. 400 300 200 100 0 power dissipation p t (mw) ambient temperature ta ( c) 77 c 85 c 0 20406080 - 20 - 40 140 100 120
HA16129AFPJ 14 electrical characteristics (ta = 25 c, v cc = 12v, vout = 5.0v, rf = r r = 180k w , cf = 3300pf, c r = 0.1 m f, r t = 390k w , c res = 1500pf, r cs = 0.2 w ) item symbol min typ max unit test conditions power supply current i cc ? 10 15 ma short detection voltage v cs 400 700 900 mv v cs = (v cc pin voltage - cs pin voltage) regulator block output voltage vout 4.925 5.00 5.075 v v cc = 12v, icont = 5ma input voltage stabilization volin - 30 ? 30 mv v cc = 6 to 17.5v, icont = 10ma load current stabilization voload - 30 ? 30 mv icont = 0.1 to 15ma ripple exclusion ratio r rej (45) 75 ? db vi = 0.5vrms, fi = 1khz output voltage temperature coefficient | d vout/ d t |? 40 (200) ppm/ c icont = 5ma output voltage adjustment range v omax ?? 7.0 v p-run input block input high-level voltage v ih 2.0 ?? v input low-level voltage v il ?? 0.8 v input high-level current i ih ? 300 500 m av ih = 5.0v input low-level current i il - 50 5 m av il = 0.0v nmi output block high level v ohn vout - 0.2 vout vout + 0.2 v i ohn = 0ma low level v oln ?? 0.4 v i oln = 2.0ma function start voltage v stn ? 0.7 1.4 v stby output block high level v ohs vout - 0.2 vout vout + 0.2 v i ohs = 0ma low level v ols ?? 0.4 v i ols = 2.0ma function start voltage v sts ? 0.7 1.4 v note: values in parentheses are design reference values.
HA16129AFPJ 15 electrical characteristics (ta = 25 c, v cc = 12v, vout = 5.0v, rf = r r = 180k w , cf = 3300pf, c r = 0.1 m f, r t = 390k w , c res = 1500pf, r cs = 0.2 w ) (cont) item symbol min typ max unit test conditions res output block high level v ohr vout - 0.2 vout vout + 0.2 v i ohr = 0ma low level v olr ?? 0.4 v i olr = 2.0ma function start voltage v str ? 0.7 1.4 v oute output block high level v ohe vout - 0.2 vout vout + 0.2 v i ohe = 0ma low level v ole ?? 0.4 v i ole = 2.0ma function start voltage v ste ? 0.7 1.4 v res function power on time ton 25 40 60 ms clock off time toff 80 130 190 ms reset pulse high time t rh 40 60 90 ms reset pulse low time t rl 15 20 30 ms lvi function nmi function (vout detection) detection voltage 1 v nmi1 4.5 4.63 4.75 v hysteresis 1 v hysn1 ? 50 100 mv temperature coefficient | d v nmi / d t |? 100 (400) ppm/ c nmi function (v cc detection) detection voltage 2 v nmi2 5.0 5.4 5.7 v r1 = 13k w , r2 = 390k w hysteresis 2 v hysn2 0.5 0.8 1.3 v r1 = 13k w , r2 = 390k w stby function detection voltage v stby 2.70 3.00 3.30 v hysteresis v hyss 1.20 1.35 1.50 v temperature coefficient | d v stby / d t |? 100 (400) ppm/ c res delay time disable time t res (100) 200 (300) m s recovery time tr (100) 200 (300) m s note: values in parentheses are design reference values.
HA16129AFPJ 16 test circuits stby nmi res voadj p-run rf cf r r c r r t gnd c res stbyadj nmisns nmiadj v cc cs cont vout a icont 390k 3300p 0.1 m 180k 180k 1500p here, the vout voltage is for a v cc of 12v, and icont is monitored as vout is varied. v cc f = 1khz duty = 50% stby nmi res voadj p-run rf cf r r c r r t gnd c res stbyadj nmisns nmiadj v cc cs cont vout i in 390k 3300p 0.1 m 180k 180k 1500p v cc f = 1khz duty = 50% stby nmi res voadj p-run rf cf r r c r r t gnd c res stbyadj nmisns nmiadj v cc cs cont vout 390k 3300p 0.1 m 180k 180k 1500p v cc f = 1khz duty = 50% iout vout vout *i cc = i in + iout vout test circuit i cc test circuit test circuit for other parameters units: resistors w capacitors f v frequency counter r2 390k r1 13k nmi vout detection nmi v cc detection HA16129AFPJ HA16129AFPJ HA16129AFPJ
HA16129AFPJ 17 system circuit examples v cc stby p-run rf cf gnd voadj oute stbyadj nmiadj nmisns cont cs v out c res r r c r r t res nmi 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 HA16129AFPJ 0.2 + 200 m + ign sw. battery ds stby res nmi port v cc (5 v) microprocessor port load to other power supplies 1500p 0.1 m 3300p 180k 390k 180k v cc stby p-run rf cf gnd voadj oute stbyadj nmiadj nmisns cont cs v out c res r r c r r t res nmi 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 HA16129AFPJ 0.2 + 200 m stby res nmi port v cc (5v) microprocessor port load 1500p 0.1 m 3300p 180k 390k 180k + ign sw. battery d s to other power supplies d z primary detection backup circuit example of a basic system example of a system using a backup circuit and a primary voltage monitoring circuit d s : d z : r2 r1 r3 r4 q1 q2 d1 r5 schottky diode zener diode
HA16129AFPJ 18 operating waveforms 100k 10k 100 10 20 30 frequency vs. duty characteristics 40 50 60 70 80 90 100 duty (%) frequency (hz) 1k ta = 25 c, c r = 0.1 m f, r r = 180k w , r t = 390k w , rf = 180k w , cf = 3300pf c res = 1500pf runaway area res and oute runaway detection lines oute normal recovery line normal area pulse generator v oh : 5v v ol : 0v res oute monitor 1000 100 10 1 10 power on time (t on ) vs. r t resistance characteristics 100 500 1000 r t resistance (k w ) power on time (t on ) (ms) 50 ta = 25 c, v cc = 0 ? 12v, rf = 180k w , cf = 3300pf, c res = 1500pf 5 500 50 c r = 0.47 m f c r = 0.1 m f c r = 0.033 m f
HA16129AFPJ 19 1000 500 50 10 clock off time (toff) vs. r r resistance characteristics clock off time (toff) (ms) 100 ta = 25 c, rf = 180k w , cf = 3300pf, c res = 1500pf, r t = 390k w 1000 100 10 1 10 reset pulse high time (t rh ) vs. r r resistance characteristics 100 500 1000 r r resistance (k w ) reset pulse high time (t rh ) (ms) 50 ta = 25 c, rf = 180k w , cf = 3300pf, r t = 390k w , c res = 1500pf 5 500 50 c r = 0.47 m f c r = 0.1 m f c r = 0.033 m f 10 100 500 1000 r r resistance (k w ) 50 c r = 0.033 m f c r = 0.1 m f c r = 0.47 m f
HA16129AFPJ 20 ta = 25 c, rf = 180k w , cf = 3300pf, r t = 390k w , c res = 1500pf 10000 1000 100 10 10 100 500 1000 rf resistance (k w ) 500 ta = 25 c, cf = 3300pf, r r = 180k w , r t = 390k w , c r = 0.1 m f 50 5000 50 c res = 0.01 m f c res = 1500pf c res = 560pf 1000 100 10 1 10 100 500 1000 r r resistance (k w ) 50 5 500 50 res delay time and recovery time (tr) vs. rf resistance characteristics res delay time and recovery time (tr) ( m s) reset pulse low time (t rl ) vs. r r resistance characteristics reset pulse low time (t rl ) (ms) c r = 0.033 m f c r = 0.1 m f c r = 0.47 m f
HA16129AFPJ 21 6.0 5.6 5.2 4.8 5000 ? roadj resistance (to ground) (k w ) 5.4 ta = 25 c, v cc = 12v, cf = 3300pf, rf = 180k w , c r = 0.1 m f, r r = 180k w , r t = 390k w , c res = 1500pf 5.0 5.8 500 output voltage vs. roadj resistance (to ground) characteristics output voltage (v) 10000 1000 100 10 10 100 500 1000 rf resistance (k w ) 500 ta = 25 c, cf = 3300pf, r r = 180k w , c r = 0.1 m f, r t = 390k w 50 5000 50 c res = 0.01 m f c res = 1500pf c res = 560pf res delay time and disable time (t res ) vs. rf resistance characteristics res delay time and disable time (t res ) ( m s) 100 1000 v cc vout voadj v roadj
HA16129AFPJ 22 vout v cc 5.0 4.6 4.2 3.8 5 m 10 m roadj resistance (to vout) (k w ) 4.4 ta = 25 c, v cc = 12v, cf = 3300pf, rf = 180k w , c r = 0.1 m f, r r = 180k w , r t = 390k w , c res = 1500pf 4.0 4.8 500 k output voltage vs. roadj resistance (to vout) characteristics output voltage vout (v) 100 k 1 m v cc vout voadj v roadj cont a cs vout v cc 12 v i cont 5.00 5.02 4.96 4.94 4.98 4.92 40 0 20 10 30 i cont current ( m a) vout voltage (v) i cont current vs. vout voltage characteristics vout voltage (v) ta = 25 c, cf = 3300pf, rf = 180k w , c r = 0.1 m f, r r = 180k w , r t = 390k w , c res = 1500pf
HA16129AFPJ 23 package dimensions hitachi code jedec eiaj mass (reference value) fp-20da conforms 0.31 g unit: mm *dimension including the plating thickness base material dimension *0.42 0.08 0.12 0.15 m 20 10 1 *0.22 0.05 0.80 max 11 12.6 5.5 2.20 max 13 max 0 e 8 0.70 0.20 + 0.20 e 0.30 7.80 1.27 0.10 0.10 1.15 0.40 0.06 0.20 0.04
HA16129AFPJ 24 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 3.0


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